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Query: UMLS:C1832588 (PSS)
 2,979 document(s) hit in 31,850,051 MEDLINE articles (0.00 seconds)

A buckminsterfullerene (C(60)) ion beam was used for X-ray photoelectron spectrometry depth profiling of various organic thin films. Specimens representing different interfaces in organic light-emitting diode devices, including hole-conducting poly(ethylenedioxythiophene), poly(styrenesulfonic acid) (PEDOT:PSS) thin films on ITO with and without polysilicic acid doping, light-emitting Ir-containing 4,4'-bis(carbazol-9-yl)biphenyl (CBP) molecules on PEDOT:PSS, and electron-conducting 2,2',2' '(1,3,5-benzinetriyl)tris(1-phenyl-1-H-benzimidazole) (TPBi) molecules on CBP, were studied. In all cases, a clear multilayer structure was observed. The chemical composition and elemental state were preserved after C(60+) ion sputtering. The sputter rate was found to decrease with sputtering time. This is due to the deposition of amorphous carbon on the surface, with the rate of implantation highly dependent on the surface interacting with the ion beam.
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PMID:X-ray photoelectron spectrometry depth profiling of organic thin films using C60 sputtering. 1808 26

A cyclometalated iridium(II) complex, bis(2-thiophen-2-yl-quinolinato)(acetoacetonate)iridium(II) [(tq)2Ir(III)(acac)] was synthesized for use in phosphorescent organic light-emitting diodes. The photophysical and electrochemical properties of the iridium(Ill) complex were characterized by UV-visible absorption, photoluminescence, and cyclic voltammetry. The maximum UV-visible absorption of (tq)2Ir(acac) was observed at 289 nm. (Tq)2Ir(acac) in dichloromethane showed its maximum photoluminescence (PL) emission at 629 nm. The optical band gap energy of (tq)2Ir(III)(acac) was measured to be 2.11 eV, and the HOMO energy level of (tq)2Ir(Ill)(acac) was calculated to be -5.08 eV. The T1 state of (tq)2Ir(lll)(acac), calculated from the PL emission maximum (2.01 eV), was well matched with the T1 level of CBP (2.6 eV). The phosphorescent organic light-emitting diode with a configuration of ITO/PEDOT:PSS/alpha-NPD/TCTA/CBP:(tq)2Ir(II)(acac)(8 wt%)/BCP/Alq3/LiF/Al was fabricated and characterized. Light emission from the device was observed at a low turn-on voltage of 4.3 V. The device showed a maximum brightness of 24,000 cd/m2 at 16.3 V and an external quantum efficiency of 11.1% with a Commission Internationale de l'Eclairage (CIE) coordinate of (0.690, 0.310).
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PMID:Pure red phosphorescent organic light-emitting diodes made of iridium(III) complex with thiophene-quinoline ligand. 2426 81

A novel main ligand 2-(2,4-dimethoxyphenyl)-5-trifluoromethylpyridine (MeO2CF3ppy) and its complex bis[2-(2,4-dimethoxy-phenyl)-5-trifluoromethyl pyridinato-N,C2]iridium acetylacetonate (MeO2CF3ppy)2Ir(acac) was synthesized. 2,4-Dimethoxy and 5-trifluoromethyl group were incorporated into main ligand to tune luminescence color. The phosphorescence organic light-emitting diodes (PhOLEDs) based on this complex with the configuration of ITO/PEDOT:PSS (40 nm)/PVK:CBP:Ir(III) complex (50 nm)/BCP (20 nm)/LiF (0.7 nm)/Al (100 nm) were fabricated. The solution-processed PhOLEDs based on (MeO2CF3ppy)2Ir(acac) exhibited a maximum quantum efficiency of 4.18% and luminance efficiency 9.04 cd/A with CIE coordinate of (0.32, 0.64).
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PMID:Synthesis and characterization of phenylpyridine-based iridium(III) complex for solution-processed phosphorescent organic light-emitting diode. 2475 56

High efficiency, solution-processed, organic light emitting devices (OLEDs), using a thermally-activated delayed fluorescent (TADF) emitter, 1,2,3,5-tetrakis(carbazol-9-yl)-4,6-dicyanobenzene (4CzIPN), are fabricated, and the transient electroluminescence (EL) decay of the device with a structure of [ITO/PEDOT: PSS/4CzIPN 5 wt % doped 4,40-N,N0-dicarbazolylbiphenyl(CBP)/bis-4,6-(3,5-di-4-pyridylphenyl)-2-methylpyrimidine (B4PyMPM)/lithium fluoride (LiF)/Al], is systematically studied. The results shed light on the dominant operating mechanism in TADF-based OLEDs. Electroluminescence in the host-guest system is mainly produced from the 4CzIPN emitter, rather than the exciplex host materials.
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PMID:The Electroluminescence Mechanism of Solution-Processed TADF Emitter 4CzIPN Doped OLEDs Investigated by Transient Measurements. 2775 31

This work demonstrates effective performance improvement by simultaneous manipulating of the hole injection and electron transport layers for (4s,6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) based green thermally activated delayed fluorescent (TADF) organic light-emitting diodes (OLEDs). A 3 wt% sorbitol doped PEDOT:PSS layer results in the highest maximum current efficiency (CEmax) of 28.28 cd A-1 and external quantum efficiency (EQE) of 17.04%. Single carrier devices denote that hole mobility gradually rises with the sorbitol ratio. The electroluminescence mainly originates from the emission of 4CzIPN. Atomic force microscopy images imply that 3 wt% sorbitol doped PEDOT:PSS film includes the largest PEDOT aggregate, which contributes to a higher electric conductivity thus the better performance of 3 wt% sorbitol doped device. Also the 4CzIPN ratio in the emissive layer was optimized, and 4 wt%-4CzIPN in CBP achieves the highest EQE of 20.99% and CEmax of 34.99 cd A-1. The EL spectrum is independent of the luminous angle at a low 4CzIPN ratio but becomes more sensitive to the luminous angle at a high 4CzIPN ratio. Finally, we find out that the TADF OLED performance is very sensitive to TPBi thickness ranging from 20 nm to 65 nm, and 40 nm of TPBi achieves a CEmax up to 64.10 cd A-1 and an excellent EQE of 25.14%, ascribing from its more balanced carrier transport.
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PMID:Highly efficient green TADF organic light-emitting diodes by simultaneously manipulating hole and electron transport. 3055 65