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Query: UMLS:C0851184 (thinning)
 11,252 document(s) hit in 31,850,051 MEDLINE articles (0.00 seconds)

The in situ rheology of polymeric solutions has been studied experimentally in etched silicon micromodels which are idealizations of porous media. The rectangular channels in these etched networks have dimensions typical of pore sizes in sandstone rocks. Pressure drop/flow rate relations have been measured for water and non-Newtonian hydrolyzed-polyacrylamide (HPAM) solutions in both individual straight rectangular capillaries and in networks of such capillaries. Results from these experiments have been analyzed using pore-scale network modeling incorporating the non-Newtonian fluid mechanics of a Carreau fluid. Quantitative agreement is seen between the experiments and the network calculations in the Newtonian and shear-thinning flow regions demonstrating that the 'shift factor,'alpha, can be calculated a priori. Shear-thickening behavior was observed at higher flow rates in the micromodel experiments as a result of elastic effects becoming important and this remains to be incorporated in the network model.
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PMID:Experimental and modeling study of Newtonian and non-Newtonian fluid flow in pore network micromodels. 1621 18

Wedge polishing was used to prepare one-dimensional Si n-p junction and Si p-channel metal-oxide-silicon field effect transistor (pMOSFET) samples for precise and quantitative electrostatic potential analysis using off-axis electron holography. To avoid artifacts associated with ion milling, cloth polishing with 0.02-microm colloidal silica suspension was used for final thinning. Uniform thickness and no significant charging were observed by electron holography analysis for samples prepared entirely by this method. The effect of sample thickness was investigated and the minimum thickness for reliable results was found to be approximately 160 nm. Below this thickness, measured phase changes were smaller than expected. For the pMOSFET sample, quantitative analysis of two-dimensional electrostatic potential distribution showed that the metallurgical gate length (separation between two extension junctions) was approximately 54 nm, whereas the actual gate length was measured to be approximately 70 nm by conventional transmission electron microscopy. Thus, source and drain junction encroachment under the gate was 16 nm.
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PMID:Sample preparation for precise and quantitative electron holographic analysis of semiconductor devices. 1684 41

We present new capacitance measurements of critical Casimir force-induced thinning of 4He films near the superfluid transition, focused on the region below Tlambda where the effect is the greatest. 4He films of 238, 285, and 340 A thickness are adsorbed on atomically smooth, N-doped silicon substrates. The Casimir force scaling function theta, deduced from the thinning of these three films, collapses onto a single universal curve, attaining a minimum theta=-1.30+/-0.03 at x=td1/nu=-9.7+/-0.8 A1/nu. The collapse confirms the finite-size scaling origin of the dip in the film thickness. Separately, we also confirm the presence down to 2.13 K of the Goldstone or surface fluctuation force, which makes the superfluid film approximately 2 A thinner than the normal film.
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PMID:Critical Casimir force in 4He films: confirmation of finite-size scaling. 1702 41

Metal-oxide semiconductor field-effect transistors fabricated on a silicon-on-insulator (SOI) wafer operate faster and at a lower power than those fabricated on a bulk silicon wafer. Scaling down, which improves their performances, demands thinner SOI wafers. In this article, improvement on the thinning of SOI wafers by numerically controlled plasma chemical vaporization machining (PCVM) is described. PCVM is a gas-phase chemical etching method in which reactive species generated in atmospheric-pressure plasma are used. Some factors affecting uniformity are investigated and methods for improvements are presented. As a result of thinning a commercial 8 in. SOI wafer, the initial SOI layer thickness of 97.5+/-4.7 nm was successfully thinned and made uniform at 7.5+/-1.5 nm.
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PMID:Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining. 1776 62

High-resolution Rutherford backscattering spectrometry (HRBS) in combination with grazing angle argon sputtering was carried out to characterize the interface of aluminum-nickel (Al-Ni) alloy and amorphous-silicon films in a thin film transistor (TFT) for liquid crystal display (LCD). After thinning the top Al-Ni layer by a 1-keV Ar sputtering, the sensitivity of the interface oxygen was improved to be twice higher than that before sputtering. The results revealed that the oxygen at the interface relates to the contact characteristics.
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PMID:Characterization of interface of Al-Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry. 1831 11

Silica dispersions stabilized by a nonionic surfactant, dodecyl hexaethylene glycol monoether (C 12E 6), were studied using rheological measurements. The viscosity-shear rate flow behavior of silica in monoethylene glycol (MEG) is shear thinning at low shear rates, leading to a Newtonian plateau at high shear rates for all dispersions studied. All rheological properties showed an increase above a critical surfactant concentration. The dispersions were stable at low levels of C 12E 6 concentrations because of electrostatic repulsions as deduced from the zeta potentials of silica that were on the order of about -30 to -65 mV in monoethylene glycol (MEG). Instability on further addition of C 12E 6 to the silica particles, a phenomenon normally obtained with high-molecular-weight polymers, was observed in MEG. Viscoelatic measurements of silica in monoethylene glycol at various surfactant concentrations showed a predominantly viscous response at low frequency and a predominantly elastic response at high frequencies, indicative of weak flocculation. Instability is explained in terms of hydrophobic and bridging interactions. Restabilization observed at high surfactant concentration was due to the steric repulsion of ethoxy groups of micellar aggregates adsorbed on silica particles. The study also revealed that the presence of trace water introduced charge repulsion that moderated rheological measurements in glycol media and introduced the charge reversal of silica particles in dodecane.
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PMID:Viscoelastic and shear viscosity studies of colloidal silica particles dispersed in monoethylene glycol (MEG), diethylene glycol (DEG), and dodecane stabilized by dodecyl hexaethylene glycol monoether (C12E6). 1885 Jul 30

For applications such as solar cells and displays, transparent single-crystal Si membranes were fabricated on a silicon-on-insulator (SOI) wafer. The SOI wafer included a buried layer of SiO2 and Si3N4 as an etch-stop layer. The etch-stop layer enabled fabrication of transparent single-crystal Si membranes with various thicknesses, and the thinning technology is described. For membranes with thicknesses of 18, 72 and 5000 nm, the respective optical transparent were 96.9%, 93.7% and 9% for R (red, lambda = 660 nm), 96.9%, 91.4% and 1% for G (green, lambda = 525 nm), and 97.0%, 93.2% and 0% for B (blue, lambda = 470 nm). Organic light-emitting diodes (OLEDs) were then fabricated on transparent single-crystal Si membranes with various top Si thicknesses. OLEDs fabricated on 18, 72 and 5000 nm thick membranes and operated at 6 V demonstrated a luminance of 1350, 443 and 27 cd m(-2) at the current densities of 148, 131 and 1.5 mA cm(-2), respectively.
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PMID:The fabrication and characterization of organic light-emitting diodes using transparent single-crystal Si membranes. 1982 29

We develop a novel way to fabricate subwavelength nanostructures on the freestanding GaN slab using a GaN-on-silicon system by combining self-assemble technique and backside thinning method. Silicon substrate beneath the GaN slab is removed by bulk silicon micromachining, generating the freestanding GaN slab and eliminating silicon absorption of the emitted light. Fast atom beam (FAB) etching is conducted to thin the freestanding GaN slab from the backside, reducing the number of confined modes inside the GaN slab. With self-assembled silica nanospheres acting as an etching mask, subwavelength nanostructures are realized on the GaN surface by FAB etching. The reflection losses at the GaN interfaces are thus suppressed. When the InGaN/GaN multiple quantum wells (MQWs) active layers are excited, the light extraction efficiency is significantly improved for the freestanding nanostructured GaN slab. This work provides a very practical approach to fabricate freestanding nanostructures on the GaN-on-silicon system for further improving the light extraction efficiency.
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PMID:Fabrication and characterization of subwavelength nanostructures on freestanding GaN slab. 2017 22

The synthesis of horizontal porous anodic alumina (PAA) structures with individually addressable channel systems is demonstrated. This was achieved by developing a multicontact design of aluminum finger structures (two to five contacts) on silicon wafers. These aluminum contacts were electrically isolated from each other, allowing the individual anodization of each contact at different conditions. This way it is possible to synthesize different pore diameters, pore densities, and channel lengths on a single chip. Scanning electron microscopy (SEM) characterization revealed that the neighboring contacts are not significantly altered during the anodization procedure. After successful barrier-layer thinning, the individual finger structures of each contact were filled by electrodeposition and thermal chemical vapor deposition. The resulting metal (Au, Cu, Ni, Co) and semiconductor (Te, Si) nanowires embedded within the porous anodic alumina mold were characterized by SEM and energy dispersive X-ray measurements. The multicontact fabrication results open a new route toward complex nanoelectronic and sensing applications.
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PMID:Multiple nanowire species synthesized on a single chip by selectively addressable horizontal nanochannels. 2029 8

In this work, a novel high-frequency ultrasonic transducer structure is realized by using PMNPT-on-silicon technology and silicon micromachining. To prepare the single crystalline PMNPT-on-silicon wafers, a hybrid processing method involving wafer bonding, mechanical lapping and wet chemical thinning is successfully developed. In the transducer structure, the active element is fixed within the stainless steel needle housing. The measured center frequency and -6 dB bandwidth of the transducer are 35 MHz and 34%, respectively. Owing to the superior electromechanical coupling coefficient (k(t)) and high piezoelectric constant (d(33)) of PMNPT film, the transducer shows a good energy conversion performance with a very low insertion loss down to 8.3 dB at the center frequency.
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PMID:PMN-PT single crystal thick films on silicon substrate for high-frequency micromachined ultrasonic transducers. 2095 69


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