Gene/Protein Disease Symptom Drug Enzyme Compound
Pivot Concepts:   Target Concepts:
Query: UMLS:C0598853 (forgetting)
 3,232 document(s) hit in 31,850,051 MEDLINE articles (0.00 seconds)

It has been demonstrated that long-term posttetanic heterosynaptic depression (LTHD), manifested in the form of a prolonged decrease in the probability of monosynaptic responses of the cell to stimulation of that afferent pathway which was not activated during conditioning tetanization of another input, takes place in the neocortex, as it does in the hippocampus. LTHD is characterized by such properties as its long-term character, cooperativity, and nonspecificity of input. LTHD in the nonconditioned input and long-term posttetanic potentiation or long-term posttetanic homosynaptic depression in the conditioned input may develop both in parallel or independantly of one another. It is hypothesized on the basis of the results obtained that LTHD (as is the case with LTP and LTD) is a calcium-dependant phenomenon, and that the achievement of a specific level of depolarization of the membrane in the region of the disposition of the inactive synapses is required for its occurrence. "Contrasting," i.e., a relative increase in the efficiency of transmission in the activating synapse, may be effected through LTHD; LTHD may be one of the mechanisms underlying forgetting.
 ...
PMID:Neurobiology of the integrative activity of the brain: some properties of long-term posttetanic heterosynaptic depression in the motor cortex of the cat. 771 72

As one of the emerging neuromorphic computing devices, memristors may break through the limitation of traditional computers with a von Neumann architecture. However, the development of flexible memristors is limited by the high-temperature fabrication process, large operating voltage and non-uniform distribution of resistance. The room-temperature process has attracted great attention due to its advantages of low thermal dissipation, low cost and excellent compatibility with flexible electronics. Here, we proposed a fully physical vapour deposition (PVD) process for fabricating a memristor without additional heat treatment. The device showed excellent resistive switching characteristics with ultralow set/reset voltages (0.48 V/-0.39 V), uniform distribution (10%/15%), stable retention characteristic, multilevel storage behavior and reliable flexibility (radius of 10 mm). With continuously modulated conductance, typical synaptic plasticities were simulated by our flexible biomemristor, including excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation/depression (LTP/LTD) and learning-forgetting curve. Furthermore, the array learning behavior like that of the human brain was simulated with these trainable biomemristors. This study paves a new way for developing low-cost, wearable, neuromorphic computing electronics at room temperature and expands the applications of artificial synapse arrays.
 ...
PMID:Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning. 3229 83