Gene/Protein Disease Symptom Drug Enzyme Compound
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Query: UMLS:C0349506 (photosensitivity)
 4,145 document(s) hit in 31,850,051 MEDLINE articles (0.00 seconds)

Successful realization of highly crystalline and densely packed Ag2S nanocrystal (NC) films has been achieved by directly converting precursor molecules, Ag(SCOPh), on preheated substrates. When an aliquot of Ag(SCOPh) solution dissolved in trioctylphosphine (TOP) is applied on preheated solid substrates at 160 degrees C, such as SiO2/Si, H-terminated Si, and quartz. Ag2S NC thin films have been formed with instant phase and color changes of the precursor solutions from pale yellow homogeneous solution to black solid films. The average diameter of individual Ag2S NCs forming thin films is ca. 25 nm, as confirmed by examining both isolated Ag2S NCs from thin films and as-made thin film samples by using transmission electron microscopy (TEM) and scanning electron microscopy (SEM), respectively. Powder X-ray diffraction (XRD) pattern shows that the synthesized Ag2S NCs have well-defined monoclinic acanthite phase. Direct precursor conversion process has resulted in densely packed Ag2S NCs with reduced interparticle distances owing to efficient removal of TOP during the reaction. Compared to the devices fabricated by the drop-coating process, Ag2S thin film devices fabricated by direct precursor conversion process have shown a ca. 300-fold increased conductance. Such Ag2S NC devices have also displayed reliable photoresponses upon white light illumination with high photosensitivity (S approximately equal to 1).
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PMID:Direct precursor conversion reaction for densely packed Ag2S nanocrystal thin films. 1724 34

We report an experimental study by photoluminescence, optical absorption and Electron Paramagnetic Resonance measurements on the effects of exposure of Ge-doped amorphous SiO2 to gamma ray radiation at room temperature. We have evidenced that irradiation at doses of the order of 1 MGy is able to generate Ge-related defects, recognizable from their optical properties as twofold coordinated Ge centers. Until now, such centers, responsible for photosensitivity of Ge-doped SiO2, have been induced only in synthesis procedures of materials. The found result evidences a role played by gamma radiation in generating photosensitive defects and could furnish a novel basis for photosensitive pattern writing through ionizing radiation.
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PMID:Twofold co-ordinated Ge defects induced by gamma-ray irradiation in Ge-doped SiO2. 1854 89

We have demonstrated a low temperature-dependent silica-based Mach-Zehnder interferometer-like optical filter on a pure silica substrate at 1.55 microm. 8GeO2-xB2O3-(92-x)SiO2 (x = 1, 2, 4 and 5 in mol.%) films have been deposited by inductively coupled plasma-enhanced chemical vapor deposition as the waveguide-core. Incorporation of the B2O3 into the waveguide-core has resulted in a lower temperature-dependent Mach-Zehnder interferometer-like optical filter wavelength from 9.4 to 8.1 pm/ degrees C at 1.55 microm. Furthermore, with a partial substitution of SiO2 by B2O3, the ultraviolet photosensitivity of the waveguide has significantly been improved. A low-propagation-loss of 0.11 dB/cm at 1.55 microm has been achieved by using actual Mach-Zehnder interferometer devices.
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PMID:Enhanced ultraviolet photosensitivity and lowered temperature-dependent performance of Ge-doped SiO2 planar waveguides with boron doping. 1949 4

We present a method of fabricating Ge-doped SiO2 fibers with corrugations around their full circumference for a desired length in the longitudinal direction. The procedure comprises three steps: hydrogenation of Ge-doped SiO2 fibers to increase photosensitivity, recording of Bragg gratings with ultraviolet light to achieve modulation of refractive index, and chemical etching. Finite-length, radially corrugated fibers may be used as couplers. Corrugated tapered fibers are used as high energy throughput probes in scanning near-field optical microscopy.
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PMID:Fabrication of corrugated Ge-doped silica fibers. 2271 12

Metals recycling from WPCBs has been studied for a long time, which results in the appearance of many proven techniques. However, the nonmetal fraction in WPCBs has not been fully recycled due to hybridpropertiesof inorganic and organic composition. In order to improve the usability of the nonmetal fraction from WPCBs, nonmetal materials separation by using a laboratory triboelectric separation system was carried out to improve the reuse efficiency of WPCBs nonmetal fraction. The optimum tribocharger material was investigated by using the charge-mass ratio measurement system, and PMMA is the optimum tribocharger material compared with PVC, PPFT, PPR, SS. The effects of airflow, voltage and feed rate on triboelectric separation were investigated. The product LOI of positive plate is up to 77.26% with recovery rate of 25.49%, while the product LOI of negative plate is down to 47.35% with recovery rate of 35.37%, and the remove rate of inorganics is up to 43.02% by triboelectric separation. The analysis results of X-ray diffraction indicate that the main inorganic materials mixed in nonmetal fraction are SiO2, Al2O3, CaO, Cu, Fe, Sn. The X-ray fluorescence analysis shows that the triboelectric separation can effectively remove the content of SiO2 and Al2O3. The scanning electron microscope images show that inorganics tribocharge positively and distribute in product collection grooves that close to negative plate.
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PMID:Removing inorganics from nonmetal fraction of waste printed circuit boards by triboelectric separation. 2677 53