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The members of the committee NMP 264 "Chemical analysis of non-oxidic raw and basic materials" of the German Standards Institute (DIN) have organized two interlaboratory comparisons for multielement determination of trace elements in silicon carbide (SiC) powders via direct solid sampling methods. One of the interlaboratory comparisons was based on the application of inductively coupled plasma optical emission spectrometry with electrothermal vaporization (ETV ICP OES), and the other on the application of optical emission spectrometry with direct current arc (DC arc OES). The interlaboratory comparisons were organized and performed in the framework of the development of two standards related to "the determination of mass fractions of metallic impurities in powders and grain sizes of ceramic raw and basic materials" by both methods. SiC powders were used as typical examples of this category of material. The aim of the interlaboratory comparisons was to determine the repeatability and reproducibility of both analytical methods to be standardized. This was an important contribution to the practical applicability of both draft standards. Eight laboratories participated in the interlaboratory comparison with ETV ICP OES and nine in the interlaboratory comparison with DC arc OES. Ten analytes were investigated by ETV ICP OES and eleven by DC arc OES. Six different SiC powders were used for the calibration. The mass fractions of their relevant trace elements were determined after wet chemical digestion. All participants followed the analytical requirements described in the draft standards. In the calculation process, three of the calibration materials were used successively as analytical samples. This was managed in the following manner: the material that had just been used as the analytical sample was excluded from the calibration, so the five other materials were used to establish the calibration plot. The results from the interlaboratory comparisons were summarized and used to determine the repeatability and the reproducibility (expressed as standard deviations) of both methods. The calculation was carried out according to the related standard. The results are specified and discussed in this paper, as are the optimized analytical conditions determined and used by the authors of this paper. For both methods, the repeatability relative standard deviations were <25%, usually ~10%, and the reproducibility relative standard deviations were <35%, usually ~15%. These results were regarded as satifactory for both methods intended for rapid analysis of materials for which decomposition is difficult and time-consuming. Also described are some results from an interlaboratory comparison used to certify one of the materials that had been previously used for validation in both interlaboratory comparisons. Thirty laboratories (from eight countries) participated in this interlaboratory comparison for certification. As examples, accepted results are shown from laboratories that used ETV ICP OES or DC arc OES and had performed calibrations by using solutions or oxides, respectively. The certified mass fractions of the certified reference materials were also compared with the mass fractions determined in the interlaboratory comparisons performed within the framework of method standardization. Good agreement was found for most of the analytes.
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PMID:Multielement trace determination in SiC powders: assessment of interlaboratory comparisons aimed at the validation and standardization of analytical procedures with direct solid sampling based on ETV ICP OES and DC arc OES. 1607 74

Single crystals of new nitridosilicates and nitridoaluminosilicates with excellent R values in X-ray investigations were analysed quantitatively using 30 to 60 microm single-spot LA-ICP-MS. Significant discrepancies between expected and measured chemical composition could not be explained by the crystallographic data. High spatial resolution analysis using electron probe microanalysis (EPMA, 10 microm) leads to the discovery of inhomogeneities in the crystalline material. The application of standard single-spot LA-ICP-MS with a spatial resolution of 30 to 60 microm is not suitable for the analysis of these crystals as the existing inhomogeneities dominate and alter the determined concentrations. However, owing to the better detection capabilities, a scanning LA-ICP-MS procedure enables a more representative analysis of single crystals of Ca(5)Si(2)Al(2)N(8) than single-spot LA-ICP-MS as a result of a larger sampling volume. It is highly likely that these impurities consist of amorphous, vitreous phases as powder diffraction X-ray data indicates the existence of a significant fraction of an X-ray amorphous material besides crystalline silicates. These microdomains contain less aluminium, silicon and calcium or are nearly free of aluminium, which explains the detected discrepancies in the chemical composition.
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PMID:Analytical evidence of amorphous microdomains within nitridosilicate and nitridoaluminosilicate single crystals. 1616 83

Volatile metals and metalloids were sampled from hot springs, fumaroles, and a hydrothermally influenced wetland in Yellowstone National Park. The sampling was based on diffusion through gas sampling chambers. Collected gases were stabilized by dissolution and oxidation in 1:100 diluted NaOCl. Special procedures were developed to analyze the oxidized samples by GF-AAS and HG-AAS. For ICP-MS, samples had to be blank-corrected for polyatomic isotope interferences, especially by 23Na35Cl+ and 23Na37Cl+ on 58Ni and 60Ni and by 40Ar23Na+ on 63Cu. From the concentrations trapped in solution, net diffusion rates were calculated by Fick's first law. The highest concentrations reached a maximum of 8 g/m3 for volatile silicon. Volatile nickel, tungsten, zinc, copper, and molybdenum, previously only known from anthropogenic sources, occurred naturally in the hydrothermal gases in ranges of tens to hundreds of microg/m3. Replicate measurements indicated significant temporal variations in concentrations, probably the result of complex changes in the hydrothermal regime as well as varying microbial activity. Global correlations between gaseous and superficial aqueous phases were missing.
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PMID:Volatile metals and metalloids in hydrothermal gases. 1674 79

Cellulose is deposited on silicon wafer surfaces via spin coating from a solution of cellulose in dimethylacetamide (+7% lithium chloride). The resulting cellulose layers were analyzed by ellipsometry, AFM, FTIR, ICP-MS, X-ray reflectivity, and contact angle measurements. For cellulose concentrations below 0.07 wt% the wafer surfaces are covered with a network of cellulose fibrils. For concentrations between 0.07 and 0.5 wt%, closed films with thicknesses between 1.5 and approximately 10 nm are obtained. These films are molecularly smooth (rms roughness<2 nm). Higher concentrations result in thicker films with significantly rougher surfaces (rms roughness>2 nm). The cellulose layers were used to investigate cellulose/cellulose adhesion and their modification by polyelectrolytes. To this end the sticking behavior of cellulose beads was analyzed. It is demonstrated that the sticking of the beads depends on the type, amount, and adsorption symmetry of adsorbed polyelectrolyte. Low, incomplete polyelectrolyte coverage always enhances sticking, whereas for high coverage the symmetry of the polyelectrolyte coating is very important. In this case, sticking (adhesion) is enhanced if only one surface is covered with polyelectrolyte prior to contact. If both surfaces were fully covered with polyelectrolytes before contact, sticking (adhesion) is decreased.
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PMID:Molecularly smooth cellulose surfaces for adhesion studies. 1678 20

After decomposition of plant standard reference materials bush twigs and leaves (GBW07602, GBW07603), poplar leaves (GBW07604) and tea (GBW07605) with either dry ashing method or wet digestion method, all kinds of fine particles left in the solution were collected and examined carefully by a scanning electron microscope (SEM), and their chemical composition were investigated by a SEM-affiliated energy-dispersive X-ray spectrometer at the same time. Moreover, the concentrations of some metal elements distributed among four different tea SRM-originated particle fractions extracted following the BCR sequential extraction procedure were determined by AAS and ICP-AES. It was found that decomposition methods have a great influence on the structure of fine particles. When dry ashing method is used, grey-colored, fluffy and porous partices can be produced, whereas fewer white-colored, compact particles can be produced when another method is used. As for chemical composition, all kinds of fine particles are almost the same, with silicon and aluminium as their main constituents, and calcium, iron, potassium, titanium and so on as their minor ones. The elementaI distribution percentages in four different particle fractions in two kinds of plant-originated particles differ from element to element, which can result in severe negative errors when plant samples are decomposed and determined for elemental concentrations.
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PMID:[Study on the characteristics and compositions of fine particles left in the solution after decomposition of plant samples]. 1682 24

The spatial distribution and concentration of impurities in metallurgical-grade silicon (MG-Si) samples (97-99% w/w Si) were investigated by use of laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS). The spatial resolution (120 mum) and low limits of detection (mg kg(-1)) for quality assurance of such materials were studied in detail. The volume-dependent precision and accuracy of non-matrix-matched calibration for quantification of minor elements, using NIST SRM 610 (silicate standard), indicates that LA-ICP-MS is well suited to rapid process control of such materials. Quantitative results from LA-ICP-MS were compared with previously reported literature data obtained by use of ICP-OES and rf-GD-OES. In particular, the distribution of element impurities and their relationship to their different segregation coefficients in silicon is demonstrated.
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PMID:Laser ablation inductively coupled plasma mass spectrometry for direct analysis of the spatial distribution of trace elements in metallurgical-grade silicon. 1690 87

In this work, we have demonstrated that the nanocrystal created by combining the self-assembled block copolymer thin film with regular semiconductor processing can be applicable to non-volatile memory device with increased charge storage capacity over planar structures. Self-assembled block copolymer thin film for nanostructures with critical dimensions below photolithographic resolution limits has been used during all experiments. Nanoporous thin film from PS-b-PMMA diblock copolymer thin film with selective removal of PMMA domains was used to fabricate nanostructure and nanocrystal. We have also reported about surface morphologies and electrical properties of the nano-needle structure formed by RIE technique. The details of nanoscale pattern of the very uniform arrays using RIE are presented. We fabricated different surface structure of nanoscale using block copolymer. We also deposited Si-rich SiNx layer using ICP-CVD on the silicon surface of nanostructure. The deposited films were studied after annealing. PL studies demonstrated nanocrystal in Si-rich SiNx film on nanostructure of silicon.
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PMID:Fabrication of nanostructure and formation of nanocrystal for non-volatile memory. 1725 30

A novel method for the determination of Al, Ca, Cr, Cu, Fe, Mg, Mn, Ni and Ti in high purity silicon carbide (SiC) using slurry introduction axial viewed inductively coupled plasma optical emission spectrometry (ICP-OES) was described. The various sizes of SiC slurry were dispersed by adding dispersant polyethylene imine (PEI). The stability of slurry was characterized by zeta potential measurement, SEM observation and signal stability testing. The optimal concentration of PEI was found to be 0.5 wt% for the SiC slurry. Analytical results of sub-mum size SiC by the slurry introduction were in good accordance with those by the alkaline fusion method which verified that determination could be calibrated by aqueous standards. For mum size SiC, results of most elements have a negative deviation and should be calibrated by the Certified Reference Material slurry. Owing to a rather low contamination in the sample preparation and stability of the slurry, the limits of detection (LODs), which are in the range of 40-2000 ng g(-1), superior to those of the conventional nebulization technique by ICP-OES or ICP-MS.
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PMID:Direct determination of impurities in high purity silicon carbide by inductively coupled plasma optical emission spectrometry using slurry nebulization technique. 1772 86

A low pressure microwave assisted vapor phase dissolution procedure for silicon nitride and volatilization of in situ generated SiF4 has been developed using H2SO4, HF and HNO3 for the determination of trace impurities present in silicon nitride. Sample was taken in minimum amount (0.5 mL for 100 mg) of H2SO4 and treated with vapors generated from HF and HNO3 mixture in presence of microwaves in a closed container. An 80 psi pressure with ramp and hold times of 30 min and 60 min respectively, operated twice, resulted in 99.9% volatilization of Si. Matrix free solutions were analyzed for impurities using DRC-ICP-MS. The recoveries of Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Cd, Ba and Pb were between 80 and 100% after volatilization of Si. The blanks were in lower ng g(-1) with method detection limits in lower ng g(-1) to sub n gg(-1) range. The method was applied for the analysis of two silicon nitride samples.
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PMID:Microwave assisted volatilization of silicon as fluoride for the trace impurity determination in silicon nitride by dynamic reaction cell inductively coupled plasma-mass spectrometry. 1803 75

The hydrogenated amorphous silicon (a-Si:H) films, which can be used as the passivation or absorption layer of solar cells, were prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and their characteristics were studied. Deposition process of a-Si:H films was performed by varying the parameters, gas ratio (H2/SiH4), radio frequency (RF) power and substrate temperature, while a working pressure was fixed at 70 m Torr. Their characteristics were studied by measuring thickness, optical bandgap (eV), photosensitivity, bond structure and surface roughness. When the RF power and substrate temperature were 300 watt and 200 degrees C, respectively, optical bandgap and photosensitivity, similar to the intrinsic a-Si:H film, were obtained. The Si-H stretching mode at 2000 cm(-1), which means a good quality of films, was found at all conditions. Although the RF power increased up to 400 watt, average of surface roughness got better, compared to a-Si:H films deposited by the conventional PECVD method. These results show the potential for developing the solar cells using ICP-CVD, which have the relatively less damage of plasma.
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PMID:Characterization of intrinsic a-Si:H films prepared by inductively coupled plasma chemical vapor deposition for solar cell applications. 1804 44


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