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We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO(2) and at the SiO(2)/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.
ACS Nano 2010 Feb 23
PMID:Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation. 2011 50

We show by first-principles calculations that the magnetic moments of zigzag ZnO nanoribbons can be efficiently modulated by transverse electric fields. Depending on the field direction, the total magnetic moment in a zigzag ZnO nanoribbon can be remarkably enhanced or reduced and even completely quenched with increasing field over a threshold strength. However, in weak electric fields below the threshold, the magnetic moment in the zigzag ZnO nanoribbons nearly remains unchanged, which can be explained in terms of intrinsic transverse electric polarization and quantum confinement effects. The threshold electric field required to modulate the magnetic moment decreases significantly with increasing ribbon width, showing practical importance.
ACS Nano 2010 Apr 27
PMID:Tuning magnetism in zigzag ZnO nanoribbons by transverse electric fields. 2023 43

Zinc oxide (ZnO) nanoparticles were synthesized and deposited on the surface of cotton fabrics using ultrasound irradiation. Optimization of the process resulted in a homogeneous distribution of ZnO nanocrystals, 30 nm in size, on the fabric surface. The mechanism of the ultrasound-assisted coating was proposed. The antibacterial activities of the ZnO-fabric composite were tested against Escherichia coli (Gram negative) and Staphylococcus aureus (Gram positive) cultures. A significant bactericidal effect, even in a 0.75% coated fabric (wt %), was demonstrated.
ACS Appl Mater Interfaces 2009 Feb
PMID:Antibacterial properties of an in situ generated and simultaneously deposited nanocrystalline ZnO on fabrics. 2035 24

A novel functionalization method for aramid fibers is developed to enhance the bonding of a ZnO nanowire interphase grown on the fiber surface for interfacial strength enhancement. The nanowire interphase functionally grades the typically discrete interface and reduces the stress concentration between the fiber and matrix. The functionalization process is developed to improve the bonding between the ZnO nanowires and the aramid fiber and is validated through Fourier transform IR and X-ray photoelectron spectroscopy studies. Mechanical testing shows significant improvement in the interfacial shear strength with no decrease in the base fiber strength. This is the only technique found in the literature for the growth of a nanowire interphase on polymer fibers for structural enhancement without degrading the in-plane properties of the bulk composite. Furthermore, it is firmly shown that the functionalization process is a necessary condition for enhanced interfacial strength, demonstrating that ZnO nanowires strongly interact with carboxylic acid functional groups.
ACS Appl Mater Interfaces 2009 Aug
PMID:Zinc oxide nanowire interphase for enhanced interfacial strength in lightweight polymer fiber composites. 2035

The effect of surface capping with poly(vinyl alcohol) (PVA) on the photocarrier relaxation of the aqueous chemically grown ZnO nanowires (NWs) has been investigated. The decay in the photocurrent during steady ultraviolet illumination due to the photocarrier relaxation has been reduced in the capped NWs, as evidenced from a decrease in the photocurrent only by 12% of its maximum value under steady illumination for 15 min and a decrease in the photocurrent by 49% of its maximum value during the same interval of time in the as-grown NWs. The surface modification is confirmed from the FESEM, HRTEM, and FTIR results. The photoluminescence spectrum shows an enhanced ultraviolet emission and a reduced defect-related emission in the capped ZnO NWs compared to bare ZnO.
ACS Appl Mater Interfaces 2009 Sep
PMID:Effect of surface capping with poly(vinyl alcohol) on the photocarrier relaxation of ZnO nanowires. 2035 34

We show that unintentional hydrogen doping of ZnO during the electrodeposition process can impact the material's carrier concentration as significantly as others have reported for intentional extrinsic doping. Mott-Schottky analyses on the natively n-type electrodeposits show a decrease in the carrier concentrations from 10(21) to 10(18) cm(-3) with increasing overpotential. A strong link exists between larger optical band gaps (determined from diffuse reflectance spectroscopy) and higher carrier concentrations, which suggests that hydrogen-based doping underlies the n-type conductivity (Moss-Burstein effect). We propose that kinetic defects introduced during growth at larger overpotentials compete with hydrogen doping, thereby leading to lower net carrier concentrations. This has important implications for using the deposition potential to tune other electrodeposit properties such as the growth rate and morphology.
ACS Appl Mater Interfaces 2009 Oct
PMID:Significant carrier concentration changes in native electrodeposited ZnO. 2035 72

Quantum dots (QDs) of ZnO of 2-4 nm size have been encapsulated within a SiO(2) matrix using aqueous chemically grown ZnO nanoparticles in a precursor of tetraethyl orthosilicate. The microstructure shows almost a uniform embedment of the QDs in the SiO(2) matrix, resulting in a ZnO QDs-SiO(2) composite structure. The photocurrent transients of the composite show an instant fall in the current followed by an exponential decay under ultraviolet (UV) illumination, causing negative photoconductivity (NPC), in contrast to the positive photoconductivity in only ZnO nanoparticles. The interface defect states due to the presence of the SiO(2) network around ZnO act as charge trap centers for the photoexcited electrons and are responsible for the NPC. The presence of interface-trapped charges under UV illumination has been further confirmed from capacitance-voltage measurements.
ACS Appl Mater Interfaces 2009 Oct
PMID:Encapsulation of 2-3-nm-sized ZnO quantum dots in a SiO2 matrix and observation of negative photoconductivity. 2035 79

Ionic liquids (ILs) based on trihexyltetradecylphosphonium coupled with either diphenylphosphate or bis(trifluoromethanesulfonyl)amide have been shown to react with magnesium alloy surfaces, leading to the formation a surface film that can improve the corrosion resistance of the alloy. The morphology and microstructure of the magnesium surface seems critical in determining the nature of the interphase, with grain boundary phases and intermetallics within the grain, rich in zirconium and zinc, showing almost no interaction with the IL and thereby resulting in a heterogeneous surface film. This has been explained, on the basis of solid-state NMR evidence, as being due to the extremely low reactivity of the native oxide films on the intermetallics (ZrO2 and ZnO) with the IL as compared with the magnesium-rich matrix where a magnesium hydroxide and/or carbonate inorganic surface is likely. Solid-state NMR characterization of the ZE41 alloy surface treated with the IL based on (Tf)2N(-) indicates that this anion reacts to form a metal fluoride rich surface in addition to an organic component. The diphenylphosphate anion also seems to undergo an additional chemical process on the metal surface, indicating that film formation on the metal is not a simple chemical interaction between the components of the IL and the substrate but may involve electrochemical processes.
ACS Appl Mater Interfaces 2009 May
PMID:New insights into the fundamental chemical nature of ionic liquid film formation on magnesium alloy surfaces. 2035 90

Electrochemically produced ZnO/metal rectifying (Schottky) junctions can exhibit consistent barrier heights and high rectifying ratios when prepared using optimized electrolyte pH (6.5) and applied voltage (</=-1.1 V vs Ag/AgCl) conditions. An increase in soft breakdown for more acidic deposition electrolytes (pH 4) correlates with a diminished preferred orientation in the resulting ZnO electrodeposit. Forward-biased junctions exposed to increased relative humidities show increased current as a result of protonic conduction from water hydrolysis at the ZnO/air interface. At moderate to high relative humidities (50-85% RH), hydrophobic coatings improve the quality of the rectifying response by changing the wetting properties of the ZnO surface. Our findings suggest that electrodeposition, in conjunction with postdeposition surface coatings, can offer improved functionality for electron transport materials in wet or humid environments.
ACS Appl Mater Interfaces 2009 Mar
PMID:The effect of synthesis conditions and humidity on current-voltage relations in electrodeposited ZnO-based Schottky junctions. 2035 75

A simple and direct electrodeposition technique is employed to fabricate ZnO nanospikes and nanopillars on indium-tin oxide glass substrates at 70 degrees C without using any template, catalyst, or seed layer. Both ZnO nanospikes and nanopillars exhibit highly crystalline ZnO wurtzite structure with a preferred (0001) plane orientation in their high-resolution transmission electron microscopic images and X-ray diffraction patterns. The corresponding Raman spectra provide evidence for the presence of defects and oxygen vacancies in these nanostructures, which could produce the photoluminescence observed in the visible region. X-ray photoelectron spectroscopy further indicates the presence of a Zn(OH)2-rich surface region in these ZnO nanostructures and that a higher Zn(OH)2 surface moiety is found for nanospikes than nanopillars. In contrast to the nanopillars with flat tops, the nanospikes with tapered tips of 20-50 nm diameter provide a favorable geometry to facilitate excellent field-emission performance, with a low turn-on electric field of 3.2 V/microm for 1.0 microA/cm(2) and a threshold field of 6.6 V/microm for 1.0 mA/cm(2). The superior field-emission property makes the nanospikes among the best ZnO field emitters fabricated on a glass substrate at low temperature.
ACS Appl Mater Interfaces 2009 Apr
PMID:Fabrication of ZnO nanospikes and nanopillars on ITO glass by templateless seed-layer-free electrodeposition and their field-emission properties. 2035 3


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